1 power transistors 2sD2374, 2sD2374a silicon npn triple diffusion planar type for power amplification complementary to 2sb1548 and 2sb1548a n features l high forward current transfer ratio h fe which has satisfactory linearity l low collector to emitter saturation voltage v ce(sat) l full-pack package which can be installed to the heat sink with one screw n absolute maximum ratings (t c =25?c) n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio base to emitter voltage collector to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i ces i ceo i ebo v ceo h fe1 * h fe2 v be v ce(sat) f t t on t stg t f conditions v ce = 60v, v be = 0 v ce = 80v, v be = 0 v ce = 30v, i b = 0 v ce = 60v, i b = 0 v eb = 6v, i c = 0 i c = 30ma, i b = 0 v ce = 4v, i c = 1a v ce = 4v, i c = 3a v ce = 4v, i c = 3a i c = 3a, i b = 0.375a v ce = 10v, i c = 0.5a, f = 10mhz i c = 1a, i b1 = 0.1a, i b2 = C 0.1a, v cc = 50v min 60 70 10 typ 30 0.5 2.5 0.4 max 200 200 300 300 1 250 1.8 1.2 unit m a m a ma v v v mhz m s m s m s * h fe1 rank classification rank q p h fe1 70 to 150 120 to 250 unit: mm 1:base 2:collector 3:emitter toC220d full pack package 1 9.9 0.3 15.0 0.5 13.7 0.2 4.2 0.2 4.6 0.2 2.9 0.2 0.8 0.1 1.4 0.2 23 f 3.2 0.1 2.6 0.1 0.55 0.15 2.54 0.3 5.08 0.5 3.0 0.5 1.6 0.2 parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 60 80 60 80 6 5 3 25 2 150 C55 to +150 unit v v v a a w ?c ?c 2sD2374 2sD2374a 2sD2374 2sD2374a t c =25 c ta=25 c 2sD2374 2sD2374a 2sD2374 2sD2374a
2 power transistors 2sD2374, 2sD2374a p c ta i c v ce i c v be v ce(sat) i c h fe i c f t i c area of safe operation (aso) r th(t) t 0 160 40 120 80 140 20 100 60 0 40 32 24 16 8 36 28 20 12 4 (1) t c =ta (2) without heat sink (p c =2w) (1) (2) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 6 5 4 3 2 1 i b =100ma 10ma 20ma 30ma 40ma 50ma 60ma 70ma 80ma 90ma t c =25?c collector to emitter voltage v ce ( v ) collector current i c ( a ) 01.2 1.0 0.8 0.2 0.6 0.4 0 8 6 2 5 7 4 1 3 v ce =4v t c =25?c base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 i c /i b =8 t c =25?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =4v t c =25?c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 0.1 0.3 1 3 10 30 100 300 1000 v ce =10v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25?c i cp i c 10ms t=1ms 1s 2sD2374 2sD2374a collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 10 ? 1 10 10 3 10 2 (1) ta=25?c (2) (1) without heat sink (2) with a 100 80 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ?c/w )
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